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Francesco Boschi

Francesco Boschi
Tel. number 0521906067
Room number (codice CIPE) 13 03 035 bis
Tutor Prof. Roberto Fornari
Research project
Growth of wide-bandgap semiconductor oxides thin-films, in particular ε- and β-phase gallium oxide,  by vapor phase techniques.
Structural, morphological, optical and electrical characterisation of the grown structures and of the related bulk materials.
  1. G. Attolini, F. Rossi, M. Negri, S. C. Dhanabalan, M. Bosi, F. Boschi, P. Lagonegro, P. Lupo, and G. Salviati, “Growth of SiC NWs by vapor phase technique using Fe as catalyst,” Mater. Lett., vol. 124, pp. 169–172, Jun. 2014.
  2. P. Lagonegro, M. Bosi, G. Attolini, M. Negri, S. C. Dhanabalan, F. Rossi, F. Boschi, P. Lupo, T. Besagni, and G. Salviati, “SiC NWs grown on silicon substrate using Fe as catalyst,” Mater. Sci. Forum, vol. 806, pp. 39–42, 2015.
  3. M. Negri, F. Rossi, G. Attolini, F. Fabbri, C. Dhanabalan, F. Boschi, M. Bosi, M. V. Nardi, and G. Salviati, “Cubic Silicon Carbide Nanowires,” in Exotic Properties of Carbon Nanomaterials: Advances in Physics and Chemistry, vol. 8, M. V. Putz and O. Ori, Eds. Springer Netherlands, 2015, pp. 101–129.
  4. F. Ricci, F. Boschi, A. Baraldi, A. Filippetti, M. Higashiwaki, A. Kuramata, V. Fiorentini, and R. Fornari, “Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3,” J. Phys. Condens. Matter, vol. 28, p. 224005, 2016.
  5. F. Orlandi, F. Mezzadri, G. Calestani, F. Boschi, and R. Fornari, “Thermal expansion coefficients of β-Ga2O3,” Appl. Phys. Express, vol. 8, p. 111101, 2015.
  6. F. Boschi, M. Bosi, T. Berzina, E. Buffagni, C. Ferrari, and R. Fornari, “Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD,” J. Cryst. Growth, vol. 443, pp. 25–30, 2016.
Pubblicato Sabato, 11 Giugno, 2016 - 23:34 | ultima modifica Sabato, 11 Giugno, 2016 - 23:34